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In situ synthesis of monolayer graphene on silicon for near-infrared photodetectors

2019-12-27

 

Author(s): Xiang, PC (Xiang, Pengcheng); Wang, G (Wang, Gang); Yang, SW (Yang, Siwei); Liu, ZD (Liu, Zhiduo); Zheng, L (Zheng, Li); Li, JR (Li, Jiurong); Xu, AL (Xu, Anli); Zhao, MH (Zhao, Menghan); Zhu, W (Zhu, Wei); Guo, QL (Guo, Qinglei); Chen, D (Chen, Da)

Source: RSC ADVANCES Volume: 9 Issue: 64 Pages: 37512-37517 DOI: 10.1039/c9ra06792b Published: NOV 18 2019

Abstract: Direct integration of monolayer graphene on a silicon (Si) substrate is realized by a simple thermal annealing process, involving a top copper (Cu) layer as the catalyst and an inserted polymethylmethacrylate (PMMA) as the carbon source. After spin-coating the PMMA carbon source on the Si substrate, the Cu catalyst was deposited on PMMA/Si by electron beam evaporation. After that, graphene was directly synthesized on Si by decomposition and dehydrogenation of PMMA and the catalyzation effect of Cu under a simple thermal annealing process. Furthermore, under an optimized growth condition, monolayer graphene directly formed on the Si substrate was demonstrated. Utilizing the as-grown graphene/Si heterojunction, near-infrared photodetectors with high detectivity (similar to 1.1 x 10(10) cm Hz(1/2) W-1) and high responsivity (50 mA W-1) at 1550 nm were directly fabricated without any post-transfer process. The proposed approach for directly growing graphene on silicon is highly scalable and compatible with present nano/micro-fabrication systems, thus promoting the application of graphene in microelectronic fields.

Accession Number: WOS:000501620400045

eISSN: 2046-2069

Full Text: https://pubs.rsc.org/en/content/articlelanding/2019/RA/C9RA06792B#!divAbstract



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