Resting-State-Based Spatial Filtering for an fNIRS-Based Motor Imagery Br...
Adaptive Learning Gabor Filter for Finger-Vein Recognition
High-Quality Hexagonal Nonlayered CdS Nanoplatelets for Low-Threshold Whi...
Optical response of an inverted InAs/GaSb quantum well in an in-plane mag...
Low insertion loss silicon-based spatial light modulator with high reflec...
Two-dimensional XSe2 (X = Mn, V) based magnetic tunneling junctions with ...
Observation of hopping transitions for delocalized electrons by temperatu...
Effect of Nanodisks at Different Positions on the Fano Resonance of Graph...
Enhanced efficiency in 808 nm GaAs laser power converters via gradient do...
0.1-5 GHz wideband Delta sigma fractional-N frequency synthesiser for sof...

In situ synthesis of monolayer graphene on silicon for near-infrared photodetectors



Author(s): Xiang, PC (Xiang, Pengcheng); Wang, G (Wang, Gang); Yang, SW (Yang, Siwei); Liu, ZD (Liu, Zhiduo); Zheng, L (Zheng, Li); Li, JR (Li, Jiurong); Xu, AL (Xu, Anli); Zhao, MH (Zhao, Menghan); Zhu, W (Zhu, Wei); Guo, QL (Guo, Qinglei); Chen, D (Chen, Da)

Source: RSC ADVANCES Volume: 9 Issue: 64 Pages: 37512-37517 DOI: 10.1039/c9ra06792b Published: NOV 18 2019

Abstract: Direct integration of monolayer graphene on a silicon (Si) substrate is realized by a simple thermal annealing process, involving a top copper (Cu) layer as the catalyst and an inserted polymethylmethacrylate (PMMA) as the carbon source. After spin-coating the PMMA carbon source on the Si substrate, the Cu catalyst was deposited on PMMA/Si by electron beam evaporation. After that, graphene was directly synthesized on Si by decomposition and dehydrogenation of PMMA and the catalyzation effect of Cu under a simple thermal annealing process. Furthermore, under an optimized growth condition, monolayer graphene directly formed on the Si substrate was demonstrated. Utilizing the as-grown graphene/Si heterojunction, near-infrared photodetectors with high detectivity (similar to 1.1 x 10(10) cm Hz(1/2) W-1) and high responsivity (50 mA W-1) at 1550 nm were directly fabricated without any post-transfer process. The proposed approach for directly growing graphene on silicon is highly scalable and compatible with present nano/micro-fabrication systems, thus promoting the application of graphene in microelectronic fields.

Accession Number: WOS:000501620400045

eISSN: 2046-2069

Full Text:!divAbstract


北京市海淀區清華東路甲35號 北京912信箱 (100083)




[email protected]

版權所有 ? 中國科學院半導體研究所

備案號:京ICP備05085259號 京公網安備110402500052 中國科學院半導體所聲明