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The Growth of Graphene on Ni-Cu Alloy Thin Films at a Low Temperature and Its Carbon Diffusion Mechanism



Author(s): Dong, YB (Dong, Yibo); Guo, S (Guo, Sheng); Mao, HH (Mao, Huahai); Xu, C (Xu, Chen); Xie, YY (Xie, Yiyang); Cheng, CT (Cheng, Chuantong); Mao, XR (Mao, Xurui); Deng, J (Deng, Jun); Pan, GZ (Pan, Guanzhong); Sun, J (Sun, Jie)

Source: NANOMATERIALS Volume: 9 Issue: 11 Article Number: 1633 DOI: 10.3390/nano9111633 Published: NOV 2019

Abstract: Carbon solid solubility in metals is an important factor affecting uniform graphene growth by chemical vapor deposition (CVD) at high temperatures. At low temperatures, however, it was found that the carbon diffusion rate (CDR) on the metal catalyst surface has a greater impact on the number and uniformity of graphene layers compared with that of the carbon solid solubility. The CDR decreases rapidly with decreasing temperatures, resulting in inhomogeneous and multilayer graphene. In the present work, a Ni-Cu alloy sacrificial layer was used as the catalyst based on the following properties. Cu was selected to increase the CDR, while Ni was used to provide high catalytic activity. By plasma-enhanced CVD, graphene was grown on the surface of Ni-Cu alloy under low pressure using methane as the carbon source. The optimal composition of the Ni-Cu alloy, 1:2, was selected through experiments. In addition, the plasma power was optimized to improve the graphene quality. On the basis of the parameter optimization, together with our previously-reported, in-situ, sacrificial metal-layer etching technique, relatively homogeneous wafer-size patterned graphene was obtained directly on a 2-inch SiO2/Si substrate at a low temperature (similar to 600 degrees C).

Accession Number: WOS:000502271700128

PubMed ID: 31744237

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

Sun, Jie         E-8239-2011         0000-0002-6479-7771

Mao, Huahai                  0000-0002-8493-9802

eISSN: 2079-4991

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